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SPICE MODEL: MMBT3904
Lead-free
MMBT3904
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
* * * * *
Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT3906) Ideal for Medium Power Amplification and Switching Lead Free/RoHS Compliant (Note 2) Qualified to AEC-Q101 Standards for High Reliability
B TOP VIEW E E D G H B C C
SOT-23
A
Dim A B C D E G
K J L M
Min 0.37 1.20 2.30 0.89 0.45 1.78 2.80 0.013 0.903 0.45 0.085 0
Max 0.51 1.40 2.50 1.03 0.60 2.05 3.00 0.10 1.10 0.61 0.180 8
Mechanical Data
* * * * * * * * *
Case: SOT-23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Marking (See Page 2): K1N Ordering & Date Code Information: See Page 2 Weight: 0.008 grams (approximate)
H J K L M a
C
B
E
All Dimensions in mm
Maximum Ratings
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
@ TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA Tj, TSTG MMBT3904 60 40 6.0 200 300 417 -55 to +150 Unit V V V mA mW C/W C
Characteristic
Collector Current - Continuous (Note 1) Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range
Notes:
1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead.
DS30036 Rev. 16 - 2
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MMBT3904
a Diodes Incorporated
Electrical Characteristics
Characteristic OFF CHARACTERISTICS (Note 3) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 3)
@ TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL Min 60 40 6.0 3/4 3/4 40 70 100 60 30 3/4 0.65 3/4 3/4 3/4 1.0 0.5 100 1.0 300 3/4 Max 3/4 3/4 3/4 50 50 3/4 3/4 300 3/4 3/4 0.20 0.30 0.85 0.95 4.0 8.0 10 8.0 400 40 3/4 5.0 Unit V V V nA nA Test Condition IC = 10mA, IE = 0 IC = 1.0mA, IB = 0 IE = 10mA, IC = 0 VCE = 30V, VEB(OFF) = 3.0V VCE = 30V, VEB(OFF) = 3.0V IC = 100A, VCE = IC = 1.0mA, VCE = IC = 10mA, VCE = IC = 50mA, VCE = IC = 100mA, VCE = 1.0V 1.0V 1.0V 1.0V 1.0V
DC Current Gain
hFE
3/4
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product Noise Figure SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time
VCE(SAT) VBE(SAT)
V V
IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA VCB = 5.0V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0
Cobo Cibo hie hre hfe hoe fT NF
pF pF kW x 10-4 3/4 mS MHz dB
VCE = 10V, IC = 1.0mA, f = 1.0kHz
VCE = 20V, IC = 10mA, f = 100MHz VCE = 5.0V, IC = 100mA, RS = 1.0kW, f = 1.0kHz
td tr ts tf (Note 4)
3/4 3/4 3/4 3/4
35 35 200 50
ns ns ns ns
VCC = 3.0V, IC = 10mA, VBE(off) = - 0.5V, IB1 = 1.0mA VCC = 3.0V, IC = 10mA, IB1 = IB2 = 1.0mA
Ordering Information
Device MMBT3904-7-F
Notes:
Packaging SOT-23
Shipping 3000/Tape & Reel
3. Short duration test pulse used to minimize self-heating effect. 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K1N
Date Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 2000 L March 3
K1N = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September
2001 M Apr 4
YM
2002 N May 5
2003 P Jun 6
2004 R Jul 7
2005 S Aug 8
2006 T Sep 9
2007 U Oct O
2008 V Nov N
2009 W Dec D
DS30036 Rev. 16 - 2
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MMBT3904
15
f = 1MHz
300 250 200 150 100 50
CIBO, INPUT CAPACITANCE (pF) COBO, OUTPUT CAPACITANCE (pF)
350
PD, POWER DISSIPATION (mW)
10
5
Cibo
Cobo
0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (C) Fig. 1, Max Power Dissipation vs Ambient Temperature
0 0.1
1
10
100
VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 2, Input and Output Capacitance vs. Collector-Base Voltage
1000
VCE(SAT), COLLECTOR-EMITTER (V) SATURATION VOLTAGE
1
IC IB = 10
hFE, DC CURRENT GAIN
TA = 125C
100
TA = -25C
TA = +25C
0.1
10
VCE = 1.0V
1 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 3, Typical DC Current Gain vs Collector Current
10
IC IB = 10
0.01 0.1 1 10 100 1000
IC, COLLECTOR CURRENT (mA) Fig. 4, Typical Collector-Emitter Saturation Voltage vs. Collector Current
VBE(SAT), BASE-EMITTER (V) SATURATION VOLTAGE
1
TA = -25C TA = 125C
TA = 25C
TA = 75C
0.1 0.1
1
10
100
1000
IC, COLLECTOR CURRENT (mA) Fig. 5, Typical Base-Emitter Saturation Voltage vs. Collector Current
DS30036 Rev. 16 - 2
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MMBT3904
IMPORTANT NOTICE Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the express written approval of Diodes Incorporated.
DS30036 Rev. 16 - 2
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MMBT3904

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